Semiconductor producing device and semiconductor device producing method

ABSTRACT

A tubular electrode ( 215 ) and a tubular magnet ( 216 ) are installed on an external section of a processing furnace ( 202 ) for an MMT device. A susceptor ( 217 ) for holding a wafer ( 200 ) is installed inside a processing chamber ( 201 ) of the processing furnace. A gate valve ( 244 ) for conveying the wafer into and out of the processing chamber; and a shower head ( 236 ) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode ( 2 ) and a heater ( 3 ) are installed inside the susceptor ( 217 ) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

This application is a divisional application of prior application Ser.No. 10/544,937 filed on Mar. 2, 2006.

TECHNICAL FIELD

The present invention relates to a semiconductor producing device forplasma processing of substrates.

BACKGROUND ART

In semiconductor producing devices of this type in the prior art, thesubstrate for processing is loaded onto a substrate holding meansinstalled within a vacuum container, a processing gas is supplied whilethe vacuum container is evacuated, and plasma discharge is generated inthe processing gas by plasma generating sources of different types tosubject the substrate to plasma processing using the processing gasactivated by the plasma discharge.

A heater and high frequency electrode are installed within the substrateholding means in accordance with the necessary of plasma processing. Theheater performs the heating of the substrate for processing. The highfrequency electrode to which a high frequency voltage is applied appliesa bias voltage to the substrate. This high frequency electrode is alsoutilized as an electrode for generating plasma within the vacuumcontainer.

However, this type of semiconductor producing device has the problem oflow heating efficiency in the heater.

The present invention therefore has the object of providing asemiconductor producing device with satisfactory heating efficiency.

The above described semiconductor producing device has the problem thatduring heating of the substrate by the heater, the high frequencyelectrode is damaged by a differential in the thermal expansion ratesbetween the substrate holding means and high frequency electrode.

The present invention therefore has the object of providing asemiconductor producing device capable of preventing damage to the highfrequency electrode.

DISCLOSURE OF INVENTION

The present invention is a semiconductor producing device for supplyinga processing gas to a vacuum container, exhausting the gas, andprocessing a substrate, and characterized in that a substrate holdingmeans for holding the substrate is installed inside the vacuumcontainer, a substrate holding section for holding the substrate isprovided on one side of the substrate holding means, a substrate heatingmeans is installed in the interior of the substrate holding means, and aspace on the interior of the substrate holding means where the substrateheating means is installed, connects to the atmosphere.

Damage to the substrate heating means is therefore prevented even if adifference in thermal expansion rates occurs between the substrateholding means and the substrate heating means.

The present invention is a semiconductor producing device for supplyinga processing gas to a vacuum container, exhausting the gas, andprocessing a substrate, and characterized in that a substrate holdingmeans for holding the substrate is installed inside the vacuumcontainer, a space for installing a high frequency electrode is providedinside the substrate holding means, and the high frequency electrode isinstalled with a clearance between it and the walls forming the space,and that the space connects to the atmosphere.

Damage to the high frequency electrode is therefore prevented even if adifference in thermal expansion rates occurs between the substrateholding means and the high frequency electrode.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic structural diagram showing the MMT device of thefirst embodiment of the present invention;

FIG. 2 is a frontal cross sectional view showing the susceptor;

FIG. 3 is a frontal cross sectional view showing part of the susceptorof the MMT device of the second embodiment of the present invention;

FIG. 4 is a plan view taken along line IV-IV of FIG. 3;

FIG. 5 is a partial cross sectional front view showing the susceptor ofthe MMT device of the third embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

One embodiment of the present invention is hereinafter described whilereferring to the accompanying drawings.

In the present embodiment, the semiconductor producing device of thisinvention is comprised of a plasma processing device (hereinafterreferred to as an MMT device) utilizing a modified magnetron typedplasma source for generating high-density plasma by means of anelectrical field and a magnetic field. The MMT device of this embodimentis configured to perform plasma processing of a semiconductor wafer(hereafter, called wafer) on which integrated circuit devices includingsemiconductor devices are produced.

A wafer is loaded in a processing chamber maintaining air-tightintegrity in the MMT device. The reactive gas is fed via the showerplate into the processing chamber. The pressure within the processingchamber is maintained at a specified pressure, high frequency electricpower is supplied to the discharge electrode, and along with forming anelectrical field, a magnetic field is formed and magnetron dischargethen occurs. The electrons emitted from the discharge electrode performa continuous cycloid movement along the circumference while drifting,increasing the generation rate of ions due to long-life span to allowgeneration of high-density plasma. By exciting and breaking down thereactive gas in this way, the MMT device can subject the wafer todifferent types of plasma processing such as diffusion processing byoxidizing or nitriding the surface of the wafer, forming a thin film onthe wafer surface and etching the wafer surface.

FIG. 1 is a schematic structural diagram showing the MMT device forplasma processing of a wafer.

The MMT device of this embodiment contains a processing chamber 201. Theprocessing chamber 201 includes a lower side container 211 as a secondcontainer and, an upper side container 210 as a first container coveringthe lower side container 211 from above. The upper side container 210 isformed in a dome shape from aluminum oxide or quartz, and the lower sidecontainer 211 is formed from aluminum. Incidentally, forming a susceptor217 serving as the heater type substrate holding means described later,from quartz or aluminum nitride reduces metal contamination of the filmduring processing.

A shower head 236 forming a buffer chamber 237 serving as the gasdispersion space, is provided in the upper side of the upper sidecontainer 210. A gas feed port 234 serving as a gas feed port isprovided on the upper wall of the shower head 236. The lower wall of theshower head 236 is formed by a shower plate 240 containing gas sprayholes 234 a as the spray outlet for spraying gas. The gas feed port 234is connected via a gas supply pipe 232 serving as a supply pipe forsupplying gas to the gas bomb (not shown in drawing) of a reactive gas230. A valve 243 a serving as a switching valve, and a mass flowcontroller 241 serving as the flow regulator means are installed on thegas supply pipe 232. A gas exhaust port 235 serving as the exhaust portfor evacuating gas is provided on the side wall of the lower sidecontainer 211 for allowing the reactive gas 230 supplied from the showerhead 236 to the processing chamber 201 and the gas after processing, toflow to the bottom of the processing chamber 201 from the periphery ofthe susceptor 217. The gas exhaust port 235 is connected via a gasexhaust pipe 231 serving as an exhaust pipe for evacuating gas, to avacuum pump 246 serving as an exhaust device. A pressure controller(hereafter called APC) 242 and a valve 243 b as a switching valve areinstalled on this gas exhaust pipe 231.

The MMT device contains a first electrode 215 as a discharge means forexcitation of the reactive gas 230. The first electrode 215 is formed ina tubular or preferably a cylindrical shape. The first electrode(hereafter called tubular electrode) 215 is installed on the outercircumference of the processing chamber 201, and enclose a plasmagenerating region 224 within the processing chamber 201. A highfrequency power supply 273 for applying high frequency electric power isconnected to the tubular electrode 215 via a matching transformer 272for matching the impedance.

The MMT device contains a pair of permanent magnets 216 above and belowas a magnetic field forming means. The permanent magnets 216 are formedin a tubular or preferably a cylindrical shape. The pair of permanentmagnets (hereafter called tubular magnets) 216, 216 are installed nearthe upper and lower ends of the external surfaces of the tubularelectrode 215. These upper and lower tubular magnets 216, 216respectively possess poles on both ends (inner circumferential end andouter circumferential end) along the radius of the processing chamber201. These poles of the tubular magnets 216, 216 are set facing eachother in opposite directions. The poles on the inner circumferentialsection are therefore of different polarities. Magnetic lines of forceare therefore formed towards the cylindrical axis along the innercircumferential surface of the tubular electrode 215.

As shown in FIG. 1, the susceptor 217 is installed in the center on thebottom side of the processing chamber 201 as a substrate holding meansfor holding the substrate for processing. The detailed structure of thesusceptor 217 is shown in FIG. 2. The susceptor 217 is supported by acylindrical shaft 6, and a cover 7 covers the bottom end opening of theshaft 6. The susceptor 217 is formed from quartz. Forming the susceptor217 from quartz yields superior resistance to heat and prevents metalcontamination of the wafer 200. The shaft 6 is also formed from quartz.Forming the shaft 6 from quartz yields superior resistance to heat andprevents metal contamination of the wafer 200. Moreover, the effect isobtained that the shaft 6 can be easily welded to the susceptor 217.

A heater 3 is installed inside the susceptor 217 as a heating means forheating the substrate for processing. In other words, a heaterinstallation space 11 is formed in the interior of the susceptor 217,and the heater 3 is installed with a specified clearance within theheater installation space 11. The heater installation space 11 connectsto the atmosphere by way of a heater wire insert hole 12. By connectingthe heater installation space 11 to the atmosphere, the effect isobtained that a sealed structure for the susceptor 217 can be easilyformed. The heater 3 is formed from silicon carbide (SiC). By formingthe heater 3 from silicon carbide, anti-oxidizing properties can bemaintained even at high temperature regions of approximately 700 to 750°C. Consequently, the heater installation space 11 can be connected tothe atmosphere. If the heater 3 is formed for example, from carbon (C)or nickel (Ni), then in the high temperature region, heat damage willoccur due to a reaction with oxygen in the atmosphere and so the heaterinstallation space 11 can not be connected to the atmosphere. The heater3 can be used in the high temperature region if formed from platinum(Pt) which possesses anti-oxidizing properties. However, platinumpossesses little resistance, so forming the heater 3 in a thin filmshape is necessary in order to set a larger resistance or setting theelectric power higher to cause a large electrical current flow isnecessary, sometimes causing the problem that the thin section of theheater 3 melted.

A heater wire 5 serving as a power supply element and connecting to theheater 3 is inserted through a heater wire insert hole 12. Supplyingelectric power to the heater 3 from the heater wire 5 allows heating thewafer 200 up to approximately 300 to 900° C. The heater wire 5 is formedfrom silicon carbide as the same material as structural material for theheater 3. Forming the heater wire 5 from silicon carbide as the samematerial as the heater 3 structural material, allows connecting theheater wire 5 to the heater 3 by welding and also yields the effect thatthe heater wire 5 can be exposed to the atmosphere, the same as theheater 3. The heater wire 5 along the interior of the shaft 6 extendsoutward to the outside from the cover 7, and connects to external wire(wiring harness, etc.) by way of the connecting element (terminal) onthe outer side of the cover 7. By inserting the heater wire 5 along theinterior of the shaft 6, the interior of the shaft 6 is isolated fromthe processing chamber 201 so that the effects caused by the reactivegas 201 in processing chamber 201 on the heater wire 5 can be prevented.The interior of the shaft 6 is connected to the atmosphere so that thereis no need to construct an air-tight structure within the interior ofthe shaft 6 and therefore air-tight terminals such as hermetic terminalsneed not be utilized to connect the heater wire 5 to the external wireand costs can be reduced. The heater wire 5 made of silicon carbide isconnected to external wire on the outer side of the cover 7 as the lowtemperature region, and by inserting it through the interior of theshaft 6 and connecting it to the heater 3 in the susceptor 7, thecomplete heater wiring system can be protected from heat damage withoutproviding a cooling structure and therefore costs are reduced.

An electrode (hereafter called the second electrode) 2 for varying theimpedance is installed inside the susceptor 217. In other words, anelectrode installation space 13 is formed in the interior of thesusceptor 217, and the second electrode 2 is installed with a specifiedclearance in this electrode installation space 13. The electrodeinstallation space 13 is connected to the atmosphere by way of anelectrode wire insert hole 14. By connecting the electrode installationspace 13 to the atmosphere, the effect is obtained that the sealedstructure of the susceptor 217 can be made a simple structure. Thesecond electrode 2 is made from platinum. By forming the secondelectrode 2 from platinum, anti-oxidizing properties can be maintainedeven at high temperature regions of approximately 700 to 750° C.Consequently, the electrode installation space 13 can be connected tothe atmosphere. Platinum possesses little resistance, so adverse effectsfrom generating heat can be avoided even if a change occurs in thequantity for controlling the high frequency electric power on the secondelectrode 2. Consequently, effects exerted on the wafer 200 from theheating temperature can be suppressed.

An electrode wire 4 serving as the power supply element is inserted inthe electrode wire insert hole 14 and connects to the second electrode2. Supplying high-frequency electric power to the second electrode 2from the electrode wire 4 allows regulating the impedance. The electrodewire 4 is formed from platinum and is same material as the structuralmaterial for the second electrode 2. Forming the electrode wire 4 fromplatinum as the same material as the second electrode 2 structuralmaterial, allows connecting the electrode wire 4 to the second electrode2 by welding and also yields the effect that the electrode wire 4 can beexposed to the atmosphere, the same as the second electrode 2. Theelectrode wire 4 along the interior of the shaft 6 extends outward tothe outside from the cover 7, and connects to external wire (wiringharness, etc.) by way of the connecting element (terminal) on the outerside of the cover 7. By inserting the electrode wire 4 along theinterior of the shaft 6, the interior of the shaft 6 is isolated fromthe processing chamber 201 so that the effects caused by the reactivegas on the electrode wire 4 in the processing chamber 201 can beprevented. The interior of the shaft 6 is connected to the atmosphere sothat there is no need to construct an air-tight structure within theinterior of the shaft 6 and therefore air-tight terminals such ashermetic terminals need not be utilized to connect the electrode wire 4to the external wire and costs can be reduced.

The electrode wire 4 made of platinum is connected to the external wireon the outer side of the cover 7 as the low temperature region, and byinserting it through the interior of the shaft 6 and connecting it tothe second electrode 2 in the susceptor 217, the complete wiring systemfor the second electrode 2 can be protected from heat damage withoutproviding a cooling structure and therefore costs are reduced.

As shown in FIG. 1, the electrode wire 4 for the second electrode 2 isconnected to a reference potential via a variable impedance mechanism274. The variable impedance mechanism 274 is comprised of a coil and avariable condenser. The potential of the wafer 200 can be controlled bycontrolling the number of coil patterns and the capacity of the variablecondenser via the second electrode 2 and the susceptor 217. The secondelectrode 2 may be connected to the high frequency power supply side,and may be connected to the reference potential side, and needless tosay can be selected if necessary.

A processing furnace 202 for processing the wafer 200 by magnetrondischarge from a magnetron typed plasma source is comprised at least ofthe processing chamber 201, the susceptor 217, the tubular electrode215, the tubular magnet 216, the shower head 236 and the exhaust port235. The processing furnace 202 is capable of plasma processing of thewafer 200 in the processing chamber 201.

A blocking plate 223 is installed for blocking the electrical field andmagnetic field on the periphery of the tubular electrode 215 and tubularmagnet 216. This blocking plate 223 is structured to prevent themagnetic field and electrical field formed by the tubular electrode 215and tubular magnet 216 from exerting adverse effects on the externalenvironment and other processing furnaces, etc.

The susceptor 217 is insulated from the lower side container 211. Asusceptor elevator mechanism 268 in the susceptor 217 is installed as alifting/lowering means for lifting or lowering the susceptor 217. Thesusceptor elevator mechanism 268 is comprised of the shaft 6 as shown inFIG. 2, and a drive mechanism (not shown in drawing) for driving theshaft 6 up and down. Through holes 217 a are formed in at least threelocations on the susceptor 217. Wafer push-up pins 266 are provided inat least three locations as a substrate push-up means to push up thesubstrate on the bottom of the lower side container 211. The throughholes 217 a and the wafer push-up pins 266 are configured so that thewafer push-up pins 266 pierces in the through holes 217 a on the statewhere the wafer push-up pins 266 are not in contact with the susceptor217 when the susceptor 217 has been lowered by the susceptor elevatormechanism 268.

A gate valve 244 is installed in the side wall on the lower sidecontainer 211 as a sluice valve. When the gate valve 244 is open, thewafer 200 is loaded in or unloaded from the processing chamber 201 by aconveyor means (not shown in drawing). When the gate valve 244 isclosed, the processing chamber 201 sealed air-tight.

The MMT device contains a controller 121 as a regulation means. Thecontroller 121 connects to the high frequency power supply 273, thematching transformer 272, the valve 243 a, the mass flow controller 241,the APC 242, the valve 243 b, the vacuum pump 246, the susceptorelevator mechanism 268, the gate valve 244, and the high frequency powersupply for applying high frequency power to the heater 3 embedded in thesusceptor 217 in order to control them.

The method for performing the specified plasma processing on the surfaceof the wafer 200 or on the surface of an underlayer film formed on thewafer 200 by using the above described MMT device is described next.

The wafer 200 is loaded into the processing chamber 201 by the conveyormeans (not shown in drawing) for conveying the wafer from a sectionoutside the processing chamber 201 forming the processing furnace 202,and is sent above the susceptor 27. This conveying operation isdescribed in detail next.

First of all, with the susceptor 217 in a lowered state, the tips of thewafer push-up pins 266 protrude through the holes 271 a of the susceptor217 and protrude to just a specified height from the susceptor 217surface. In this state, the gate valve 244 provided in the lower sidecontainer 211 opens and the wafer 200 is loaded by the conveyance means,onto the top edges of the wafer push-up pins 266. The gate valve 244closes when the conveyance means retracts to outside the processingchamber 201. When the susceptor 217 is raised by the susceptor elevatormechanism 268, the wafer 200 is mounted on the upper surface of thesusceptor 217. The susceptor 217 then rises to the position forprocessing the wafer 200.

The heater 3 embedded in the susceptor 217 is preheated, and the loadedwafer 200 is heated to the wafer processing temperature within a rangeof 300 to 900° C. The pressure within the processing chamber 201 ismaintained within a range of 0.1 to 100 Pa utilizing the vacuum pump 246and the APC 242.

When the wafer 200 has been heated to the processing temperature,processing gas for example such as oxygen gas or nitrogen gas issupplied from the gas feed port 234 to the processing chamber 201. Thisprocessing gas is sprayed from the gas spray holes 234 a of the showerplate 240, in a sprayed state, towards the upper surface (processingsurface) of the wafer 200 held in the susceptor 217. The high frequencyelectric power is simultaneously applied to the tubular electrode 215from the high frequency power supply 273 via the matching transformer272. The applied electric power is an output value within a range ofapproximately 150 to 200 watts. The variable impedance mechanism 274 atthis time controls the impedance to within the desired value.

The effect of the magnetic field from the pair of tubular magnets 216,216 causes a magnetron discharge, an electrical charge is trapped in thespace above the wafer 200, and a high-density plasma is generated in theplasma generating region 224. The plasma processing on the surface ofthe wafer 200 on the susceptor 217 is then performed with thehigh-density plasma that was generated.

The processing conditions for example when forming a plasma nitridedfilm as an interfacial oxidation prevention film on the surface of thewafer 200 by utilizing the MMT device are described next.

The high frequency power is 100 to 500 watts. The processing pressure is2 to 100 Pa. The nitrogen gas flow rate is 100 to 1,000 sccm (standardcubic centimeters). The processing temperature is 25 to 600° C. Theprocessing time is one second or longer. The film thickness is 1 to 3nanometers.

The processing conditions for performing plasma oxidizing process forfilm improvement processing of the tantalum oxide film with an MMTdevice are as follows.

The high frequency power is 100 to 500 watts. The processing pressure is2 to 100 Pa. The oxygen gas flow rate is 100 to 1,000 sccm. Theprocessing temperature is 25 to 600° C. The processing time is onesecond or longer.

Using the conveying means (not shown in drawing), the wafer 200 whosesurface processing is complete, is conveyed outside the processingchamber 201 in a sequence that is the reverse of the wafer loadingsequence.

The controller 121 respectively controls the on/off switching ofelectric power from the high frequency power supply 273, the adjustmentof the matching transformer 272, the opening/closing of the valve 243 a,the flow rate of the mass flow controller 241, the degree of valveopening of the APC 242, the opening/closing of the valve 243 b, thestarting and stopping of the vacuum pump 246, operation for raising andlowering the susceptor elevator mechanism 268, the opening/closing ofthe gate valve 244, and the on/off switching of electric power to thehigh frequency power supply for applying high frequency power to theheater 3 embedded in the susceptor 217.

FIG. 3 is a frontal cross sectional view of a section of the susceptorof the MMT device of the second embodiment of the present invention.FIG. 4 is a plan view taken along line IV-IV of FIG. 3.

The susceptor 217 of this embodiment is formed from quartz or aluminumnitride. Preferably, quartz is utilized since a large temperaturedifferential occurs within the susceptor 217 in the high temperatureregion for example of 500° C. or more, and the strength must bemaintained. Incidentally, neither quartz or aluminum nitride do notcause metallic contamination effects on the wafer 200 which is thesubstrate for processing.

The susceptor 217 of the present embodiment is comprised of a firstsusceptor member 1 a as a lid, and a second susceptor member 1 b as themain piece. A groove 8 is formed in a lattice shape in the upper surfaceof the second susceptor member 1 b. A high frequency electrode 2 a in amesh shape and serving as the second electrode is installed on thegroove 8 and the first susceptor member 1 a covers the top of the highfrequency electrode 2 a. The first susceptor member 1 a and the secondsusceptor member 1 b are attached together by adhesives or by heat weld.A space 8 a is formed by the groove 8 and the first susceptor member 1a. The walls of the groove 8 and the first susceptor member 1 a formingthis space 8 a are the walls of the space.

In the present embodiment, the groove 8 is formed at 4 millimeterintervals on the upper surface of the second susceptor member 1 b. Thewidth of the groove 8 is 1.6 millimeters. The width of a protrusion 9formed relatively between the adjacent grooves 8 and 8 is 2.4millimeters. The outer diameter of the high frequency electrode 2 a is1.2 millimeters smaller than the groove 8 width dimension. When the highfrequency electrode 2 a is installed within the groove 8, a clearance Sof 0.2 millimeters is respectively formed on both sides of the highfrequency electrode 2 a.

The value of the distance between the adjacent grooves 8 can be set to asuitable figure as needed. The groove 8 may be formed by knurling orembossing of the known art.

The electrode wire 4 is inserted through the electrode wire insert hole14 of the second susceptor member 1 b and connected to the highfrequency electrode 2 a, and the space 8 a within the susceptor 217 isconnected to the atmosphere via the electrode wire insert hole 14. Thespace 8 a is in this way connected to the atmosphere so that a materialwith electrical conductance, a high melting point and anti-oxidizingproperties such as platinum or palladium or platinum rhodium alloy ispreferably selected as the material of the high frequency electrode 2 a.These metals are not susceptible to oxidizing effects from theatmosphere even if utilized at temperatures of 300 to 900° C. withoutproblems such as wire breakage.

If the susceptor 217 and shaft 6, and the shaft 6 and shaft cover 7 arejoined air-tightly, and the electrode wire 4 penetrates hermetically theshaft cover 7, then the space 8 a within the susceptor 217 can beblocked from the atmosphere so that even materials susceptible tooxidizing effects in a temperature range of 300 to 900° C. may beutilized as the material for the high frequency electrode 2 a, andmaterial with electrical conductivity and a high melting point that doesnot easily melt can be used. For example, material such as molybdenum,nickel, or tungsten can be selected as this type of material.

In the present embodiment, the high frequency electrode 2 a is installedwith a clearance S versus the wall forming the space within the firstsusceptor member 1 a and the second susceptor member 1 b so that damageto the high frequency electrode 2 a can be prevented even if the thermalexpansion differential between the susceptor members 1 a, 1 b and thehigh-frequency electrode 2 a becomes large.

The space 8 a is provided and if the material for the high frequencyelectrode 2 a is selected according to whether there will be an inflowfrom the atmosphere, then damage to the high frequency electrode 2 a dueto a loss of strength because of oxidation can be prevented.

If the first susceptor member 1 a and the second susceptor member 1 bare attached air-tight by adhesive material or heat weld, then the highfrequency electrode 2 a can be isolated from the atmosphere of theprocessing chamber 201 so that the wafer 200 as the substrate forprocessing, can be protected from the effects of metal contaminationfrom the high frequency electrode 2 a.

FIG. 5 is a partial cross sectional front view showing the susceptor ofthe MMT device of the third embodiment of the present invention.

The overall structure of the MMT device of this embodiment and theschematic structure of the susceptor are the same as the previouslydescribed MMT device and susceptor.

The susceptor 217 of this embodiment is comprised of an upper stagesusceptor member 1 c and intermediate stage susceptor member 1 d andlower stage susceptor member 1 e and a mounting susceptor member 1 f.The material is overall quartz. The high frequency electrode 2 a servingas the second electrode is installed inside the upper stage susceptormember 1 c.

The mounting susceptor member 1 f is fabricated separately from theupper stage susceptor member 1 c and clamped air-tight by adhesivematerial or heat weld. The mounting susceptor member 1 f may however beformed as one piece with the upper stage susceptor member 1 c.

An upper side cavity 10 a is formed on the upper surface of theintermediate stage susceptor member 1 d, and the heater 3 serving as theheater means for the wafer 200 as the substrate for processing isinstalled on the upper side cavity 10 a. The intermediate stagesusceptor member 1 d on the side of the upper side cavity 10 a iscovered by the upper stage susceptor member 1 c. The upper stagesusceptor member 1 c and the intermediate stage susceptor member 1 d areclamped air-tight by adhesive material or heat weld.

A lower side cavity 10 bis formed on the upper surface of the lowerstage susceptor member 1 e. A reflective member 20 is installed on thelower side cavity 10 b, so as to cover the lower side surface of theheater 3 serving as the heater means for the wafer 200 as the substratefor processing. The lower stage susceptor member 1 e on the side of thelower side cavity 10 b is covered by the intermediate stage susceptormember 1 d, and the lower stage susceptor member 1 e and theintermediate stage susceptor member 1 d are clamped air-tight byadhesive material or heat weld.

Assembling as described above, the heater 3 serving as the wafer heatingmeans is arranged in a state where put between the mounting susceptormember 1 f serving as the wafer holding section and the reflectivemember 20, and the quartz in the intermediate stage susceptor member 1 dallows light to transmit through it, so that the radiant heattransmitted through the intermediate stage susceptor member 1 d from theheater 3 can be reflected from the reflective member 20.

Material for the heater 3 can be selected from among any of siliconcarbide, carbon, or glass carbon. The reflective member 20, may befabricated from any of nickel, molybdenum, tungsten, platinum,palladium, or platinum. rhodium alloy that is metal with a high meltingpoint. The reflective member 20 has at least a mirror surface on theheater 3 side to reflect effectively the radiant heat towards the heater3 side. Reflecting the radiant heat from the heater 3 by means of thereflective member 20 effectively reduces the electric power consumptionby the heater 3.

A clearance S3 is provided between the heater 3 and the upper stagesusceptor member 1 c. A clearance S20 is also provided between thereflective member 20 and the intermediate stage susceptor member 1 d.The clearance S3 and the clearance S20 prevent damage to the heater 3due to a differential in thermal expansion between the upper stagesusceptor member 1 c and the heater 3; and prevent damage to thereflective member 20 due to the differential in thermal expansionbetween the intermediate stage susceptor member 1 d and the reflectivemember 20.

The clearance S20 formed between the reflective member 20 and theintermediate stage susceptor member 1 d may be connected to theatmosphere. In this case, any of platinum, palladium, or platinumrhodium alloy that is not susceptible to oxidizing effects is preferablyused for the reflective member 20.

The clearance S20 formed between the intermediate stage susceptor member1 d and the reflective member 20 may be sealed to block the connectionto the atmosphere. In this case, material such as any of nickel,molybdenum, or tungsten that is susceptible to damage from oxidizingeffects may be utilized for the reflective member 20. The reflectivemember 20 can be manufactured at a lower cost than materials notsusceptible to effects from oxidizing.

To compensate for a drop in strength due to the clearances, throughholes may be formed in necessary locations in the heater 3 and innecessary locations in the reflective member 20, and in the upper stagesusceptor member 1 c, intermediate stage susceptor member 1 d, and lowerstage susceptor member 1 e; and a quartz rod installed on each hole ofthe heater 3 without direct contact and, then clamped to the upper stagesusceptor member 1 c and intermediate stage susceptor member 1 d byadhesives or heat weld. Also a quartz rod may be installed on each holeof the reflective member 20 without direct contact and then clamped tothe intermediate stage susceptor member 1 d and lower stage susceptormember 1 e by adhesives or heat weld.

Also adhesives or heat weld is used between the upper stage susceptormember 1 c and intermediate stage susceptor member 1 d; and between theintermediate stage susceptor member 1 dand lower stage susceptor member1 e to seal and clamp them so that the heater 3 and the reflectivemember 20 are blocked from the atmosphere in the processing chamber 210and therefore the wafer 200 as the substrate for processing is notaffected by metal contamination from the heater 3 and reflective member20.

The explanation for the third embodiment described an example where thehigh frequency electrode 2 a is provided on the upper stage susceptormember 1 c, however the high frequency electrode 2 a may be omitted.

1. A semiconductor producing device for supplying a processing gas to avacuum container, exhausting the gas, and processing a substrate,wherein a substrate holding means for holding the substrate is installedinside the vacuum container, an electrode installation space is formedinside the substrate holding means for installing a high frequencyelectrode therein, the high frequency electrode is made from a materialwith a high melting point and anti-oxidizing properties and the highfrequency electrode is installed with a clearance between itself and thewalls forming the space, and the space is directly connected to theatmosphere through one of a plurality of holes in a solid shaft, and anelectrode wire connected to the high frequency electrode connects to aterminal of the high frequency electrode after extending from the highfrequency electrode to an outside section of the substrate holdingmeans, and the electrode wire is at least partly inside the hole in theshaft.
 2. A semiconductor producing device according to claim 1, whereinthe electrode wire is made of the same material as the high frequencyelectrode.
 3. A semiconductor producing device according to claim 1,wherein the high frequency electrode is made from platinum.
 4. Asemiconductor producing device according to claim 1, wherein anelectrode wire of the high frequency electrode is made from platinum. 5.A semiconductor producing device according to claim 1, wherein the highfrequency electrode connects to one end of the electrode wire, the otherend of the electrode wire connects to an external wire on the outer sideof a cover.
 6. A semiconductor producing device according to claim 5,wherein the high frequency electrode and the electrode wire are made ofthe same material.
 7. A semiconductor producing device according toclaim 1, wherein the high frequency electrode is made from a materialnot susceptible to oxidizing effects from the atmosphere when utilizedat temperatures of 300 to 900° C.
 8. A substrate holding means forholding a substrate, wherein an electrode installation space is formedinside the substrate holding means for installing a high frequencyelectrode therein, the high frequency electrode is made from a materialwith a high melting point and anti-oxidizing properties and the highfrequency electrode is installed with a clearance between itself and thewalls forming the space, and the space is directly connected to theatmosphere through one of a plurality of holes in a solid shaft, and anelectrode wire connected to the high frequency electrode connects to aterminal of the high frequency electrode after extending from the highfrequency electrode to an outside section of the substrate holdingmeans, and the electrode wire is at least partly inside the hole in theshaft.
 9. A substrate holding means for holding a substrate according toclaim 8, wherein the high frequency electrode is made from a materialnot susceptible to oxidizing effects from the atmosphere when utilizedat temperatures of 300 to 900° C.